JUS standardizacija

POC 66 POC 67 POC 68 POC 69 POC 69 JPOOO:

Oc 709000 OC 700000 ac 750100% OC 7501i01** EC 747571 OC 750102 OC 750102 "CN0001

OC 750102 CN0092

|EG_J 74770 OC 750103 OC 750105*** OC 750108 OC 750110 OC 750112 OC 760O000*% OC 700000 POC 82

OC 800000 POC 26 POC 28 POC 30 POC 30 US09001

POC 30 US0DO2

šok

* number printed on specification is incorrect (OC 763000)

1985 Sectional specification. Piezoelectric ceramic resonators for low frequency (LF). (JP)

1985 Blank detail specification. Piezoelectric ceramic resonators for low frequency (EE): Assessment level E. (JP)

1985 Sectional specification. Piezoelectric ceramic resonators for high frequency (HF). (JP)

1985 Blank BEI specification. Piezoelectric ceramic resonators for high frequency (HF). Assessment level E. (JP)

1987 Pičzo8 (ia) ric ceramic resonators for high frequency (HF). Assessment level E

1954 Generic spocification. Discrete devices and integrated circuits. (see Paae 79 A for emsndments to OC 700090)

1954 Generic specification. Discrste devices and integrated circuits (see Page 79 A for emedments to OC 700000)

1985 Secticnal specificatlon. Discrete devices

1985 Blank detail specification. Signal diodes, switching diodes and conitrolled- avalanche diodes . .:

1989 Blank detail specificetion. Ambiant-rated bipolar transistors for low and high-frequer:cy amplisicsticn

1988 Bipolar itransistor for ambient-rated high-frequency amplification, type 3DG130. Assessment levele ||!

1958 Bipolar transistor for. ambient-rated, forward a.g.c., low-noisg, high-frequency ampli{fication, type SDG79. Assessment level |i

1989 larik detail specification, Case-rated bipolar transistcrs Tor low-frequency amplification 1986 Blank detail specification. Voltage regulator diodes and voltage reference diodes, exclu-

ding tempsrature compsnssted precision reference diodes

1989 Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), amDient and cass-rated, up to 100 A

1989 Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A.

1987 Blank datail specification. Single-gate fieid-eTfect transitors, up to 5Wand 1 GHz

1988 Generic specification. Film and hybrid film integrated circuits

1984 Generic specification. Discrete devices and integrated circuits

1989 Sectional specification. Semiconductor integrated circuits (US)

(being

withdrawn)

1988 Generic specification. Fibre optic attenuators

1984 Generic sprcification. Electromachanical switches of assessed quality. (US)

belrig

vwitndravvn

1984 Sectional specification. Rotary switches of assessed quality. (US)

axtonaed

1984 Blank detail specification. Electromechanical rotary switches of assessed quality. (US)

extended i

1984 Rotary switch (low current rating) with printed circuit mounting, maximum 12 positions, 15 mm maximum width

1954 Rotary switch (low current rating) with central mounting, maximum 12 positions, 20 mm

maximum width {English shaft and mounting bushing)

number printed on spscificaslon is incorrect (OC 750000) number printed on spoficication is incorrect (OC 750001) number printed on specification is: incorrect (OC 750005)

Standardizacija 1989./br. 7 — 12